The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 10, 2004
Filed:
May. 23, 2002
Applicant:
Inventors:
Hironobu Sai, Kyoto, JP;
Jun Ichihara, Kyoto, JP;
Assignee:
Rohm Co., Ltd., Kyoto, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01S 5/00 ; H01L 2/100 ;
U.S. Cl.
CPC ...
H01S 5/00 ; H01L 2/100 ;
Abstract
On a semiconductor substrate ( ), a double hetero structure portion ( ) in which an active layer ( ) having smaller band gap is sandwiched between semiconductor layers ( ) having larger band gap than that of the active layer ( ) is formed. A light reflection film ( ) is formed at least a part of side walls of the double hetero structure portion ( ). As a result, a semiconductor light emitting device that light which leaks from side wall of light emitting area in a chip is reduced and emission light can be outputted efficiently can be obtained.