The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 10, 2004
Filed:
Jan. 06, 2003
Applicant:
Inventor:
Emmanuel Dubois, Quesnoy sur Deule, FR;
Assignee:
Centre National de la Recherche Scientifique, Paris, FR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/7095 ;
U.S. Cl.
CPC ...
H01L 2/7095 ;
Abstract
This invention relates to a MOS transistor made in the thin film of silicon of an SOI chip ( ), said thin film ( ) being slightly doped and of less than 30 nm in thickness, the source ( ) and drain ( ) contacts being of the Schottky type at the lowest level of Schottky barrier possible for majority carriers, with an accumulation type transistor operation.