The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 10, 2004
Filed:
Jan. 17, 2003
Eun-Kyung Baek, Gyeonggi-do, KR;
Sun-Hoo Park, Gyeonggi-do, KR;
Hong-Gun Kim, Gyeonggi-do, KR;
Kyung-Joong Yoon, Seoul, KR;
Abstract
A method of manufacturing a semiconductor device includes forming a silicon nitride layer on a semiconductor substrate on which a predetermined pattern is formed. The silicon nitride layer includes a plurality of bonds formed between silicon and nitrogen. A portion of the bonds formed between silicon and nitrogen is broken to form at least one free bonding site on a surface of the silicon nitride layer. A silane compound and a flow fill method are used to form a silicon oxide layer on the silicon nitride layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile