The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 10, 2004
Filed:
May. 31, 2002
Applicant:
Inventors:
Frank Richter, Dresden, DE;
Dietmar Temmler, Dresden, DE;
Assignee:
Infineon Technologies AG, Munich, DE;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/18242 ;
U.S. Cl.
CPC ...
H01L 2/18242 ;
Abstract
The present invention relates to a memory cell arrangement and a fabrication method for this memory cell arrangement. In this case, the memory cells ( ) arranged regularly on a semiconductor wafer each have a trench capacitor ( ) formed in the semiconductor substrate ( ), and a selection transistor ( ) formed above the trench capacitor ( ), and also a self-aligned selection transistor ( )—memory trench contact ( )—trench insulation ( ) arrangement.