The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 10, 2004
Filed:
Nov. 17, 2000
Other;
Abstract
The present invention relates to a method of forming a diode ( ) for integration with a semiconductor device comprising the steps of providing a layer ( ) of semiconductor material, forming a dielectric layer ( ) over the layer of semiconductor material, introducing a first conductivity type dopant into the dielectric layer ( ), forming a semi-conductive layer ( ) over the dielectric layer ( ), introducing a second conductivity type dopant into a first region ( ) of the semi-conductive layer and re-distributing the first conductivity type dopant from the dielectric layer ( ) into the semi-conductive layer ( ) so as to form a second region ( ) of the first conductivity type dopant in the semi-conductive layer ( ), the second region ( ) being adjacent the first region ( ) so as to provide a P/N junction of the diode ( ).