The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 10, 2004
Filed:
Dec. 30, 2002
Yong Tae Moon, Kwangju, KR;
Nae Man Park, Kwangju, KR;
Baek Hyun Kim, Kwangju, KR;
Seong Ju Park, Kwangju, KR;
Kwagju Institute of Science and Technology, Kwangju, KR;
Abstract
Disclosed is a nanosized III-nitride compound semiconductor multiple quantum well light-emitting diode, comprising a silicon substrate ( ), and an amorphous silicon nitride layer (base) ( ) formed on the substrate and including III-nitride compound semiconductor nano grains ( ) spontaneously formed therein. The nanosized nitride semiconductor multiple quantum well light-emitting diode and the fabrication method thereof according to the present invention are free from the problems of the conventional III-nitride compound semiconductor epitaxial thin film growth on silicon substrates. Accordingly, a high-quality nanosized III-nitride compound semiconductor multiple quantum well light-emitting diode having no crystalline defect can be provided. Furthermore, the nanosized multiple quantum well light-emitting diode according to the present invention does not require a p-type GaN thin film so that there is no possibility of causing crack that is a problem in the conventional method of fabricating a III-nitride compound semiconductor light-emitting diode using III-nitride epitaxial thin films grown on silicon substrates. In addition, the number of processes of fabricating the diode is remarkably reduced to result in an economical and productive light-emitting diode fabrication process.