The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 10, 2004
Filed:
Jul. 02, 2001
Marilyn I. Wright, Austin, TX (US);
Advanced Micro Devices, Inc., Austin, TX (US);
Abstract
A method for determining critical dimension variation includes providing a wafer having a grating structure comprising a plurality of lines; illuminating at least a portion of the lines with a light source; measuring light reflected from the illuminated portion of the lines to generate a reflection profile; and determining a critical dimension variation measurement of the lines based on the reflection profile. A metrology tool adapted to receive a wafer having a grating structure comprising a plurality of lines includes a light source, a detector, and a data processing unit. The light source is adapted to illuminate at least a portion of the lines. The detector is adapted to measure light reflected from the illuminated portion of the lines to generate a reflection profile. The data processing unit is adapted to determine a critical dimension variation measurement of the lines based on the reflection profile.