The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 10, 2004

Filed:

Sep. 06, 2002
Applicant:
Inventors:

Mikio Fujiwara, Tokyo, JP;

Makoto Akiba, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/166 ;
U.S. Cl.
CPC ...
H01L 2/166 ;
Abstract

The present invention relates to a method for reducing low-frequency noise in a cooled circuit wherein low-frequency noise in a cryogenic semiconductor device is reduced by carrying out thermal cure. The semiconductor device is turned on at a first temperature, and the temperature of the semiconductor device is temporarily raised, while flowing current in the semiconductor device, to a second temperature that is higher than the first temperature, and then cooling the temperature of the semiconductor device from the second temperature to a cryogenic temperature, at which the semiconductor device can operate.


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