The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 10, 2004

Filed:

Dec. 19, 2002
Applicant:
Inventor:

Eiji Tani, Tosu, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C04B 3/5565 ; B05D 3/02 ;
U.S. Cl.
CPC ...
C04B 3/5565 ; B05D 3/02 ;
Abstract

A process produces a fiber-reinforced silicon carbide composite. The resulting composite has a high toughness where bundles of a reinforcing fiber are densely covered with glassy carbon derived from a resin to avoid deterioration of the strength, and it can easily be produced even in complicated shapes. Specifically, a fiber-reinforced silicon carbide composite is produced by preparing a fiber prepreg containing a powdered silicon and a resin and molding the prepreg to yield a green body having a desired shape, or laminating a fiber prepreg containing a resin and a woven fabric prepreg containing a powdered silicon and a resin in alternate order, and molding the laminate to yield a green body having a desired shape; carbonizing the green body at 900° C. to 1350° C. in an inert atmosphere; impregnating the carbonized body with a resin; firing the impregnated body again at 900° C. to 1350° C. in an inert atmosphere; performing the resin impregnation-carbonization procedure one to five times; subjecting the carbonized composite to reaction sintering at a temperature of 1300° C. or more in vacuo or in an inert atmosphere to form open pores, and finally infiltrating molten silicon into the sintered body having open pores at a temperature of about 1300° C. to 1800° C. in vacuo or in an inert atmosphere.


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