The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 03, 2004

Filed:

Dec. 06, 2002
Applicant:
Inventors:

Sining Mao, Savage, MN (US);

Songsheng Xue, Eden Prairie, MN (US);

William Vavra, Maple Plain, MN (US);

William Jude O'Kane, Co Derry, IE;

James Keith Price, Tonka Bay, MN (US);

Patrick Joseph Ryan, St. Paul, MN (US);

Assignee:

Seagate Technology LLC, Scotts Valley, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11B 5/39 ; G01R 3/309 ;
U.S. Cl.
CPC ...
G11B 5/39 ; G01R 3/309 ;
Abstract

The invention provides a magnetic sensor having a first opposing pair and a second opposing pair of resistive elements configured in a Wheatstone bridge, wherein the resistive elements are a synthetic antiferromagnetic giant magnetoresistive sensor having a reference layer and a pinned layer of different thicknesses, wherein the first opposing pair has a net magnetic moment that is opposite to that of the second opposing pair, and wherein the first opposing pair has a thicker reference layer than pinned layer, and the second opposing pair has a thicker pinned layer than reference layer. Other embodiments of the invention have resistive elements that are opposingly bilayer and trilayer synthetic antiferromagnetic giant magnetoresistive sensors, or opposingly synthetic and standard antiferromagnetic giant magnetoresistive sensors.


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