The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 03, 2004
Filed:
Mar. 20, 2003
Nozomu Ohkouchi, Yokosuka, JP;
Masanobu Shigeta, Yokosuka, JP;
Tatsushi Nakanishi, Zushi, JP;
Takashi Moroboshi, Yokohama, JP;
Takeshi Hosoya, Yokohama, JP;
Masami Sonda, Yokohama, JP;
Nobuyasu Katayama, Yokohama, JP;
Victor Company of Japan, Ltd., Yokohama, JP;
Abstract
An alignment layer to be used for liquid crystal displays each having at least two substrates with liquid crystals sealed therebetween is formed as follows. The substrates placed on each of several substrate trays are heated in a first load-lock chamber. At least one of the two substrates is irradiated with evaporated particles of oxide silicon (SiOx: 1.0≦×≦2.0) by vacuum deposition at an angle in the range from 45° to 60° from a direction of the normal line on the substrate surface to form an alignment layer thereon while the substrate trays are being moved in a layer-deposition chamber intermittently or sequentially. The substrate trays are cooled in a second load-lock chamber, thus producing substrates each formed the alignment layer thereon. The deposition chamber may be set under a requirement 0≦&Dgr;&thgr;≦3° in &Dgr;&thgr;=tan )dcos &thgr;/(D+d sin &thgr;)), “d” a distance from the substrate center to the center of a substrate edge, “D” a distance from the substrate center to the center of an evaporation source containing the oxide silicon, and &thgr; an angle formed between a direction in which the normal line extends on the substrate center and another direction in which evaporated particles of oxide silicon are deposited on the substrate center from the evaporation source. The alignment layer may be formed at an angle of layer deposition in the range from 3° to 10°.