The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 03, 2004

Filed:

Jun. 26, 2002
Applicant:
Inventors:

Jae-Yong Park, Gyeonggi-Do, KR;

Juhn-Suk Yoo, Seoul, KR;

Sung-Ki Kim, Seoul, KR;

Yong-In Park, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 3/524 ; G02F 1/136 ;
U.S. Cl.
CPC ...
H01L 3/524 ; G02F 1/136 ;
Abstract

In a multi-layered structure of the organic EL diode, a gate insulating layer is formed on a buffer layer. A first insulating layer is formed on the gate insulating layer. An anode is formed on the first insulating layer. Second and third insulating layers commonly having an open portion are sequentially formed on the anode. An organic EL layer and a cathode are connected to the anode through the open portion. The anode is connected to a drain electrode of a TFT through an anode contact hole and the TFT is insulated from the organic EL layer by the third insulating layer.


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