The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 03, 2004
Filed:
Apr. 17, 2003
Tetsuroh Murakami, Tenri, JP;
Takahisa Kurahashi, Kashiba, JP;
Shouichi Ohyama, Ikoma-gun, JP;
Hiroshi Nakatsu, Tenri, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
In a semiconductor light-emitting element, a first DBR and a second DBR, with a specified spacing left between them, form a resonator, and a single quantum well active layer is positioned at the loop of a standing wave within this resonator. The single quantum well active layer is composed of a Ga In P well layer and a pair of (Al Ga ) In P barrier layers, which sandwiches the Ga In P well layer therebetween. The impurity concentration of the (Al Ga ) In P barrier layers is higher than that of the Ga In P well layer. For example, the impurity concentration of the Ga In P well layer is set to 2×10 cm , while the impurity concentration of the (Al Ga ) In P barrier layers is set to 2×10 cm .