The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 03, 2004
Filed:
Oct. 29, 2002
Timothy J Phillips, Malvern, GB;
QinetiQ Limited, Farnborough, GB;
Abstract
An extracting transistor ( )—an FET—includes a conducting channel extending via a p-type InSb quantum well ( ) between p-type InAlSb layers ( ) of wider band-gap. One of the InAlSb layers ( ) incorporates an ultra-thin n-type &dgr;-doping layer ( ) of Si, which provides a dominant source of charge carriers for the quantum well ( ). It bears n source and drain electrodes ( ) and an insulated gate ( ). The other InAlSb layer ( ) adjoins a barrier layer ( ) of still wider band-gap upon a substrate layer ( ) and substrate ( ) with electrode ( ). Biasing one or both of the source and drain electrodes ( ) positive relative to the substrate electrode ( ) produces minority carrier extraction in the quantum well ( ) reducing its intrinsic contribution to conductivity, taking it into an extrinsic saturated regime and reducing leakage current.