The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 03, 2004
Filed:
May. 16, 2002
Applicant:
Inventors:
Yongchul Ahn, Eagan, MN (US);
Kaichiu Wong, Sunnyvale, CA (US);
Assignee:
Cypress Semiconductor Corporation, San Jose, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1302 ;
U.S. Cl.
CPC ...
H01L 2/1302 ;
Abstract
A method of forming a semiconductor structure is described that includes etching a first metal layer at the bottom of a via in a first insulating layer to expose a second metal layer, wherein the first metal layer is on the second metal layer, and wherein the etching of the first metal layer is not reactive-ion etching. Methods of making semiconductor devices and electronic devices are also described.
Ahn, Yongchul. (2004). Methods of forming semiconductor structures, and articles and devices formed thereby (U.S. Patent No. 6770566). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6770566
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile