The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 03, 2004
Filed:
Jan. 02, 2001
Kee Jeung Lee, Seoul, KR;
Dong Jun Kim, Kyoungki-do, KR;
Hyundai Electronics Co., Ltd., Ichon, KR;
Abstract
Disclosed is a method for fabricating capacitors for semiconductor devices. This method includes the steps of forming a lower electrode on an understructure of a semiconductor substrate, depositing an amorphous TaON thin film over the lower electrode, annealing the deposited amorphous TaON thin film in an NH atmosphere, and repeating the deposition of the amorphous TaON thin film and the annealing of the deposited amorphous TaON thin film at least one time, thereby forming a TaON dielectric film having a multi-layer structure, and forming an upper electrode over the TaON dielectric film. The TaON dielectric film having a multi-layer structure exhibits a dielectric constant that is superior to those of conventional dielectric films. Accordingly, the TaON dielectric film of the invention can be used for capacitors in next generation semiconductor memory devices of grade 256 MB and higher.