The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 03, 2004
Filed:
Dec. 13, 2002
Robert R. Abbott, Westfield, NJ (US);
Vincent J. Fratello, Basking Ridge, NJ (US);
Steve J. Licht, Bridgewater, NJ (US);
Irina Mnushkina, Randolph, NJ (US);
Integrated Photonics, Inc., Birmingham, AL (US);
Abstract
Faraday rotator garnet thick films have improved specific Faraday rotations without requiring a bias magnet. Films of nominal composition Bi (Eu Ho ) Fe Ga O are grown lattice matched to available {Gd Ca }[Ga Mg Zr ](Ga )O substrates. The film is prepared with Z ≦0.45, which allows higher concentrations of Bi to be included in the film than prior compositions. The increased amount of Bi results in a higher specific Faraday rotations for the film. For devices such as non-reciprocal optoelectronic devices that require 45-degree rotators, the increased specific Faraday rotation results in the use of thinner films of reduced path length as well as increased crystal growth yields.