The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 03, 2004
Filed:
Dec. 20, 2002
Leo J. Schowalter, Latham, NY (US);
Glen A. Slack, Scotia, NY (US);
J. Carlos Rojo, Sound Beach, NY (US);
Crystal IS, Inc., Latham, NY (US);
Abstract
A method and apparatus for producing bulk single crystals of AlN includes a crystal growth enclosure with Al and N source material therein, capable of forming bulk crystals. The apparatus maintains the N partial pressure at greater than stoichiometric pressure relative to the Al within the crystal growth enclosure, while maintaining the total vapor pressure in the crystal growth enclosure at super-atmospheric pressure. At least one nucleation site is provided in the crystal growth enclosure, and provision is made for cooling the nucleation site relative to other locations in crystal growth enclosure. The Al and N vapor is then deposited to grow single crystalline AlN at the nucleation site.