The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 27, 2004
Filed:
Mar. 06, 2003
Applicant:
Inventor:
Ming Zhou, Torrance, CA (US);
Assignee:
International Rectifier Corporation, El Segundo, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 3/1113 ; H01L 2/976 ; H01L 2/994 ; H01L 3/1062 ; H01L 3/1119 ;
U.S. Cl.
CPC ...
H01L 3/1113 ; H01L 2/976 ; H01L 2/994 ; H01L 3/1062 ; H01L 3/1119 ;
Abstract
A superjunction device has a plurality of equally spaced P columns in an N epitaxial layer. The concentration of the P type columns is made greater than that needed for maintaining charge balance in the N epi region and the P columns thereby to increase avalanche energy. An implant dose of 1.1E13 or greater is used to form the P columns.
Zhou, Ming. (2004). Superjunction device with improved avalanche capability and breakdown voltage (U.S. Patent No. 6768170). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6768170
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile