The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 27, 2004
Filed:
Dec. 23, 2002
Applicant:
Inventor:
Hiroyuki Hoshi, Tokyo, JP;
Assignee:
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/7108 ; H01L 2/976 ; H01L 2/994 ; H01L 3/1119 ;
U.S. Cl.
CPC ...
H01L 2/7108 ; H01L 2/976 ; H01L 2/994 ; H01L 3/1119 ;
Abstract
A semiconductor device includes a metal-insulator-metal (MIM) capacitor having a lower metal layer disposed on a substrate, a dielectric film, and upper metal layers, a testing electrode pad connected to the lower metal layer of the MIN capacitor, two connecting terminals located on the substrate connected to the upper metal layers, and a field effect transistor (FET) having an electrode connected to one of the upper metal layers. By grounding the connecting terminals located on the substrate, and impressing a test voltage on the testing electrode pad, a withstand voltage test of the MIM capacitor can be conducted without damaging the FET.