The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 27, 2004

Filed:

Mar. 07, 2002
Applicant:
Inventors:

Terrance P. Smith, Woodbury, MN (US);

Mark J. Pellerite, Woodbury, MN (US);

Tommie W. Kelley, Coon Rapids, MN (US);

Dawn V. Muyres, St. Paul, MN (US);

Dennis E. Vogel, Lake Elmo, MN (US);

Kim M. Vogel, Lake Elmo, MN (US);

Larry D. Boardman, Woodbury, MN (US);

Timothy D. Dunbar, Woodbury, MN (US);

Assignee:

3M Innovative Properties Company, Saint Paul, MN (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 5/100 ;
U.S. Cl.
CPC ...
H01L 5/100 ;
Abstract

An organic thin film transistor comprising a self-assembled monolayer interposed between a gate dielectric and an organic semiconductor layer. The monolayer is a product of a reaction between the gate dielectric and a precursor to the self-assembled monolayer. The semiconductor layer comprises a material selected from an acene, substituted with at least one electron-donating group, halogen atom, or a combination thereof, or a benzo-annellated acene or polybenzo-annellated acene, which optionally is substituted with at least one electron-donating group, halogen atom, or a combination thereof. Methods of making a thin film transistor and an integrated circuit comprising thin film transistors.


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