The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 27, 2004

Filed:

Sep. 11, 2002
Applicant:
Inventor:

Takashi Miida, Kanagawa, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 4/014 ; H01L 3/162 ;
U.S. Cl.
CPC ...
H01J 4/014 ; H01L 3/162 ;
Abstract

Disclosed is a solid state imaging device, comprising a unit pixel including a photo diode and a MOS transistor for optical signal detection provided with a high-density buried layer for storing optically generated charges generated by light irradiation in the photo diode , a vertical scanning signal driving scanning circuit for outputting a scanning signal to a gate electrode , and a voltage boost scanning circuit for outputting a boosted voltage higher than a power source voltage to a source region . In this case, a boosted voltage is applied from the voltage boost scanning circuit to the source region , and the optically generated charges stored in the high-density buried layer are swept out from the high-density buried layer by a source voltage and a gate voltage risen by the boosted voltage.


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