Method of manufacturing a contact of a semiconductor device using cluster apparatus having at least one plasma pretreatment module

Abstract

A method of manufacturing a contact of a semiconductor device includes a series of pretreatment processes each performed in a plasma pretreatment module. A semiconductor substrate has an interlayer formed on an underlayer of a material containing silicon. A contact hole is formed in the interlayer to expose a surface of the underlayer. Subsequently, the semiconductor substrate is loaded into a plasma pretreatment module. The photoresist pattern is removed by ashing in the plasma pretreatment module. A damaged layer at the surface exposed by the contact hole is then removed in the plasma pretreatment module. Subsequently, the semiconductor substrate is pre-cleaned in the plasma pretreatment module. The semiconductor substrate is then transferred, while in a vacuum, to a deposition module. There, an upper layer is formed on the substrate to fill the contact hole.