The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 27, 2004
Filed:
May. 23, 2002
Si Bum Kim, Seoul, KR;
Hynix Semiconductor Inc., Kyoungki-do, KR;
Abstract
A semiconductor has a MIM capacitor formed on the same level with a dual damascene Cu line. The semiconductor includes a first insulating interlayer with first contact holes, first metal lines formed in the first contact holes, and second and third insulating interlayers including the first metal lines. Second and third contact holes are formed in the second insulating interlayer to expose some region of the first metal lines, a trench is formed in the third insulating interlayer corresponding to the second and third contact holes, and a capacitor structure is formed in the second contact hole and the trench above the second contact hole. Second metal lines fill the second and third contact holes and the trenches above the second and third contact holes.