The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 27, 2004
Filed:
Oct. 26, 2001
Applicant:
Inventor:
Enio Luiz Carpi, Fishkill, NY (US);
Assignee:
Infineon Technologies AG, Munich, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 9/00 ; G03F 7/00 ;
U.S. Cl.
CPC ...
G03F 9/00 ; G03F 7/00 ;
Abstract
A method of fabricating a mask ( ) for patterning a semiconductor wafer. The mask ( ) includes elliptical ( ) or rounded features formed using an elliptical-shaped energy beam ( ). Undesired stair-step shaped edges ( ) of the oval ( ) or rounded features formed by using a substantially circular-shaped energy beam to form the oval or rounded features are smoothed with the elliptical-shaped energy beam ( ). A method of fabricating a semiconductor device with the mask ( ) is included. The elliptical-shaped energy beam ( ) may also be used to directly pattern a semiconductor wafer.