The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 20, 2004
Filed:
Aug. 28, 2002
Mahesh S. Sharma, Austin, TX (US);
David M. Newmark, Austin, TX (US);
Teja Singh, Austin, TX (US);
Joshua A. Bell, Austin, TX (US);
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
A method, system and computer program product for extracting parasitic resistance and capacitance values to simulate performance of an integrated circuit. A selected number of interconnections in an integrated circuit may be identified (“interconnections of interest”). A netlist containing a list of the transistors in the integrated circuit may be pruned by selecting those transistors in the netlist that are in the channel connected regions on the driving side of the interconnections of interest and those on the receiving side of the interconnections of interest. Parasitic resistance and capacitance values for layout layers connected to the interconnections of interest may be extracted. These extracted parasitic resistance and capacitance values may be associated with the transistors connected to those layout layers in the pruned netlist. By extracting parasitic resistance and capacitance values as describe above, less compute-intensive RC extractions may be made thereby using less memory and processing power.