The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 20, 2004
Filed:
Dec. 02, 2002
Tetsuya Yagi, Tokyo, JP;
Yasuaki Yoshida, Tokyo, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
A semiconductor laser device includes a stacked structure. The stacked structure includes a first electrode, a substrate of a first conductivity type on the first electrode, a first cladding layer of the first conductivity type, an active layer, a second cladding layer of a second conductivity type opposite the first conductivity type, an insulating layer, and a second electrode. The second cladding layer includes at least first and second portions having thickness different from each other. The first portion is thicker than the second portion. The insulating layer is deposited on the second cladding layer but not on the first portion. The second electrode is electrically connected to the first portion. A product of a reciprocal of layer thickness and heat conductivity of the insulating layer is smaller than 4×10 W/(m K).