The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 20, 2004
Filed:
May. 20, 2002
Kenneth W. Brown, Yucaipa, CA (US);
James R. Gallivan, Pomona, CA (US);
Raytheon Company, Waltham, MA (US);
Abstract
A monolithic semiconductor power device. The device is designed to produce high energy density and high power level RF/Millimeter wave radiation using the quasi-optical spatial power of an array ( ) of small amplifiers ( ) on a solid state wafer ( ). Each cell ( ) of the array ( ) contains a reflection amplifier ( ) that receives radiation and retransmits the signal back into the approximate same direction from which it was received. The radiation exiting from the array ( ) is physically like a reflection that has been modified by the individual amplifier's characteristics. The exiting amplified radiation leaves the array ( ) as a coherent wave front ( ). The individual amplifier elements are fabricated on a monolithic solid state wafer ( ). Rather than being diced into individual amplifiers, the elements are electrically connected together with proper biases and ground levels on the actual solid state wafer.