The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 20, 2004
Filed:
Oct. 17, 2000
Yoshiaki Honda, Kyoto, JP;
Tsutomu Ichihara, Hirakata, JP;
Takuya Komoda, Sanda, JP;
Koichi Aizawa, Neyagawa, JP;
Yoshifumi Watabe, Tondabayashi, JP;
Takashi Hatai, Neyagawa, JP;
Matsushita Electric Work, Ltd., Osaka, JP;
Abstract
A field emission-type electron source includes an insulative substrate in the form of a glass substrate having an electroconductive layer formed thereon. A strong electrical field drift layer in the form of an oxidized porous polycrystalline silicon layer is formed over the electroconductive layer . This electroconductive layer includes a lower electroconductive film , made of copper and formed on the insulative substrate , and an upper electroconductive film made of aluminum and formed over the electroconductive film . The strong electrical field drift layer is formed by forming a polycrystalline silicon layer on the electroconductive layer , rendering the polycrystalline silicon layer to be porous and finally oxidizing it. The upper electroconductive film has a property that reacts easily with silicon and, therefore, formation of an amorphous layer which would occur during formation of the polycrystalline silicon layer can be suppressed.