The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 20, 2004
Filed:
Dec. 11, 2001
Seiko Epson Corporation, Tokyo, JP;
Abstract
The present invention provides a thin film transistor (TET) and its production method which enable the stabilizing of saturation current and improving reliability by improving the film quality of the channel region. The TFT includes a channel region towering over a gate electrode through a gate insulation film, a source region connecting to the channel region and a drain region connecting to the channel region on an opposite side of the source region are formed on the polycrystal semiconductor film on which island-like patterning is performed. An indented section is formed on a surface of the channel region, and the section corresponding to the indented section becomes a recombination center which captures the small-number carrier (holes) because the degree of the crystallization is low in the section corresponding to the indented section due to shift from the optimum conditions at the time of laser annealing of the semiconductor.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile