The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 20, 2004
Filed:
Jul. 02, 2002
Michiaki Hiyoshi, Yokohama, JP;
Shigeru Hasegawa, Yokohama, JP;
Naoyuki Inoue, Toda, JP;
Tatsuo Harada, Yokohama, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A semiconductor device includes an active region with a main semiconductor device section, and a junction-termination region therearound. A first diffusion layer of a second conductivity type is formed in a surface of a first semiconductor layer of a first conductivity type, and extends from the active region into the junction-termination region. A second diffusion layer of the second conductivity type is formed in contact with the first diffusion layer, and extends in the junction-termination region. A first contact electrode is disposed in the active region and in contact with the first diffusion layer, and electrically connected to a first main electrode of the main semiconductor device section. A second contact electrode is disposed in the junction-termination region and in contact with the first diffusion layer, and surrounds the active region. A connection electrode electrically connects the first and second contact electrodes to each other.