The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 20, 2004

Filed:

Mar. 11, 2003
Applicant:
Inventors:

Hiroyuki Hatano, Mohka, JP;

Masakatsu Saitoh, Yokohama, JP;

Shinji Furuichi, Mohka, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01P 1/512 ;
U.S. Cl.
CPC ...
G01P 1/512 ;
Abstract

An ultra-small and slim semiconductor acceleration sensor with high sensitivity is provided. The acceleration sensor has a mass portion formed at a center part of a silicon semiconductor substrate, a frame formed on an edge part of the substrate, thin elastic support arms which are provided on top surfaces of the mass portion and the frame and connect the mass portion and the frame, and strain gauges constituted by a plurality of pairs of piezoresistors formed on top surfaces of the elastic support arms. A distance between a pair of Z-axis strain gauges provided on the top surface of the elastic support arm is made longer by 0.4L to 1.2L or shorter by 1.0L to 1.8L than a distance between a pair of X-axis strain gauges, whereby output of the Z-axis strain gauge is made at the same level as output of the X-axis strain gauge. Alternatively, an angle formed by the Z-axis strain gauge with an X-axis is made 10 to 30 degrees or 65 to 90 degrees, whereby the output of the Z-axis strain gauge is made at the same level as the output of the X-axis strain gauge.


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