The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 13, 2004
Filed:
Aug. 14, 2002
Applicant:
Inventor:
Myong-Jae Kim, Kyunggi-do, KR;
Assignee:
Samsung Electronics Co., Ltd., Suwon, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/00 ;
U.S. Cl.
CPC ...
G11C 7/00 ;
Abstract
The disclosure is a nonvolatile semiconductor memory including bitlines connected to memory cells and high-voltage specified NMOS transistors connecting the bitlines to sense amplifiers. Column selection signals applied to the NMOS transistors are established at a voltage higher than a power supply voltage during a read operation. In the case of power supply voltage drain, the invention prevents degradation of the drivability of the NMOS transistors.
Kim, Myong-Jae. (2004). Low-power nonvolatile semiconductor memory device (U.S. Patent No. 6762959). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6762959
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile