The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 13, 2004
Filed:
Apr. 25, 2003
Koji Sakui, Setagaya-ku, JP;
Toshiharu Watanabe, Herndon, VA (US);
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
A nonvolatile semiconductor memory includes rewritable nonvolatile memory cell transistors connected in series. The nonvolatile memory cell transistors includes at least two charge storage layers formed on a first insulating film, a control gate shared by two adjacent transistors which are two of the nonvolatile memory cell transistors and which are adjacent to each other, and a second insulating film formed between the at least two charge storage layers and the control gate. A top of the control gate has a flat surface that covers the at least two charge storage layers that correspond to the two adjacent transistors, and the flat surface extends from one of the at least two charge storage layers to the other of the at least two charge storage layers.