The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 13, 2004
Filed:
Oct. 25, 2002
Gerhard Span, Wattens, AT;
Other;
Abstract
The invention relates to a thermoelectric element comprising at least one n-type layer ( ) and at least one p-type layer ( ) of one or more doped semiconductors, whereby the n-type layer(s) ( ) are arranged to form at least one pn-type junction ( ). At least one n-type layer ( ) and at least one p-type ( ) are contacted in an electrically selective manner, and a temperature gradient (T , T ) is applied or tapped parallel (x-direction) to the boundary layer ( ) between at the least one n-type layer ( ) and p-type layer ( ). At least one pn-type junction is formed essentially along the entire, preferably longest, extension of the n-type layer(s) ( ) and the p-type layer(s) ( ) and, thus, essentially along the entire boundary layer ( ) thereof.