The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 13, 2004
Filed:
Dec. 19, 2002
Oki Data Corporation, Tokyo, JP;
Abstract
A light emitting semiconductor device comprises an upper cladding layer ( ) consisting of a first upper cladding layer ( ) provided on an active layer ( ) and a second upper cladding layer ( ) provided on the first upper cladding layer ( ) to increase the light emitting efficiency and reduce the defective ratio in formation of a patterned layer. The energy band gap (Eg( )) of the first upper cladding layer ( ) is larger than the energy band gap (Eg( )) of the second upper cladding layer ( ), which is larger than the energy band gap (Eg( )) of the active layer ( ). One of a patterned layer, an dielectric interlayer ( ) has an etched region at a predetermined area thereof so that at least a part of the upper cladding layer ( ) or a second conductive type semiconductor region ( ) is exposed.