The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 13, 2004
Filed:
Jul. 10, 2003
Applicant:
Inventors:
Assignee:
Hynix Semiconductor Inc., Kyungki-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/1336 ;
U.S. Cl.
CPC ...
H01L 2/1336 ;
Abstract
Disclosed is a method of forming an isolation film in semiconductor devices using a shallow trench. Trenches are formed in silicon substrates of a memory cell region and a peripheral circuit region. The inert ion is then injected into the surface of the trench in the peripheral circuit region, thus forming an amorphous layer. Thereafter, an oxidization process is implemented so that a thick oxide film is grown due to excessive oxidization at the amorphous layer, thus making thicker the trench in the peripheral circuit region than the trench in the memory cell region by a thickness of the oxide film.