The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 13, 2004
Filed:
Aug. 21, 2002
Applicant:
Inventor:
Stefan Linder, Zofingen, CH;
Assignee:
ABB Schweiz Holding AG, Baden, CH;
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/1332 ; H01L 2/1336 ;
U.S. Cl.
CPC ...
H01L 2/1332 ; H01L 2/1336 ;
Abstract
In a method of manufacturing a semiconductor element ( ) having a cathode ( ) and an anode ( ), the starting material used is a relatively thick wafer ( ) to which, as a first step, a barrier region ( ) is added on the anode side. It is then treated on the cathode side, and the thickness of the wafer ( ) is then reduced on the side opposite to the cathode ( ), and an anode ( ) is produced on this side in a further step. The result is a relatively thin semiconductor element which can be produced economically and without epitaxial layers.