The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 13, 2004
Filed:
Sep. 26, 2001
Hiroyoshi Tanaka, Kyoto, JP;
Ryuichi Murai, Toyonaka, JP;
Hideaki Yasui, Hirakata, JP;
Yoshiki Sasaki, Katano, JP;
Akira Shiokawa, Osaka, JP;
Masatoshi Kudoh, Hirataka, JP;
Koichi Kotera, Osaka, JP;
Masaki Aoki, Minoo, JP;
Mitsuhiro Ohtani, Sakai, JP;
Shigeo Suzuki, Hirakata, JP;
Kinzou Nonomura, Ikoma, JP;
Matsushita Electric Industrial Co. Ltd., Osaka-fu, JP;
Abstract
A PDP does not suffer from dielectric breakdown even though a dielectric layer is thin, with the problems of conventional PDPs, such as cracks appearing in the glass substrates during the production of the PDP being avoided. To do so, the surface of silver electrodes of the PDP is coated with a 0.1-10 &mgr;m layer of a metallic oxide, on whose surface OH groups exist, such as ZnO, ZrO , MgO, TiO , Al O , and Cr O . The metallic oxide layer is then coated with the dielectric layer. It is preferable to form the metallic oxide layer with the CVD method. The surface of a metallic electrode can be coated with a metallic oxide, which is then coated with a dielectric layer. The dielectric layer can be made of a metallic oxide with a vacuum process method or the plasma thermal spraying method. The dielectric layer formed on electrodes with the CVD method is remarkably thin and flawless. When the dielectric layer is formed with the vacuum process method or the plasma spraying method, warping and cracks conventionally caused by baking the dielectric layer are prevented. Here, borosilicate glass including 6.5% or less by weight of alkali can be used as the glass substrate.