The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 6760400 B1

PDF
Full Text
Expired
Date of Patent:
Jul. 06, 2004

Filed:

Aug. 05, 2002
Applicant:
Inventors:

Hiroshi Watanabe, Hyogo, JP;

Toyoki Kitayama, Hyogo, JP;

Kouji Kise, Hyogo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G21K 5/00 ;
U.S. Cl.
CPC ...
G21K 5/00 ;
Abstract

In an exposing method reflecting synchrotron radiation, having a critical wavelength of 8.46 Å, emitted from a radiation generator (SR device) having a deflecting magnetic field of 4.5 T and electron acceleration energy of 0.7 GeV twice through rhodium mirrors having an oblique-incidence angle of 1°, transmitting the light through a beryllium window of 20 &mgr;m and through an X-ray mask prepared by forming an X-ray absorber pattern on a diamond mask substrate of 2 &mgr;m in thickness and thereafter irradiating a resist surface provided on a substrate with the light, the resist has a main absorption waveband in the wave range of at least 3 Å and not more than 13 Å and contains an element generating Auger electrons having energy in the range of at least about 0.51 KeV and not more than 2.6 KeV upon exposure.


Find Patent Forward Citations

Watanabe, Hiroshi. (2004). Exposing method and semiconductor device fabricated by the exposing method (U.S. Patent No. 6760400). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6760400

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