The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 06, 2004
Filed:
Jun. 18, 2001
Seiki Gotou, Tokyo, JP;
Akira Ohta, Tokyo, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
A high frequency power amplifier that can improve efficiency of an operation of a transistor without limiting any input-side higher harmonic load of an impedance matching circuit to a short-circuit load, and can increase reflection of higher harmonics. By adjusting line lengths and line widths of signal lines, a 2nd harmonic can be adjusted to be an open load (a reflected phase angle of &Ggr;in: 0-90°, the quantity of reflection: 0.6-1.0), and a 3rd harmonic is adjusted to be a short-circuit load (the reflected phase angle of &Ggr;in: 110-270°, the quantity of reflection: 0.6-1.0). With this input-side higher harmonic load of the impedance matching circuit, efficiency of transistor operation can be improved. By disposing a higher harmonic processing circuit closer to a transistor, a high frequency power amplifier with a shortened line length between the higher harmonic processing circuit and the transistor, and increased quantity of reflection of higher harmonics is produced.