The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 06, 2004
Filed:
Sep. 18, 2001
Kazutoshi Shimizume, Kanagawa, JP;
Sony Corporation, , JP;
Abstract
MOS transistors A and B form a transistor circuit (an inverter in this case). A MOS transistor D is one for interrupting leakage current that has a channel length longer than those of the MOS transistors A and B. Under the action of an enable terminal (Enable), the MOS transistor D conducts only while the circuit is operated, and does not conduct and thereby interrupts leakage current while the circuit is in a standby state. A MOS transistor C does not produce effect while the circuit is operated, and makes the potential of an output terminal (Output) a high potential or a low potential (not intermediate potential) only while the circuit is in the standby state. Therefore, the circuit controls unnecessary through-transistor current of a standby type circuit in a succeeding stage, which current is conventionally caused at an intermediate potential during standby.