The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 06, 2004
Filed:
Feb. 04, 2002
Applicant:
Inventors:
Greg D. U'Ren, Corona del Mar, CA (US);
Klaus F. Schuegraf, Aliso Viejo, CA (US);
Marco Racanelli, Santa Ana, CA (US);
Assignee:
Newport Fab, LLC, Newport Beach, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/906 ; H01L 3/1072 ; H01L 3/111 ;
U.S. Cl.
CPC ...
H01L 2/906 ; H01L 3/1072 ; H01L 3/111 ;
Abstract
According to one exemplary embodiment, a heterojunction bipolar transistor comprises a base having a concentration of a first material at a first depth, where the first material impedes the diffusion of a base dopant. The first material also causes a change in band gap at the first depth in the base. According to this exemplary embodiment, the base further includes a concentration of a second material, where the concentration of second material increases at the first depth so as to counteract the change in band gap.