The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 06, 2004
Filed:
Sep. 06, 2002
Applicant:
Inventors:
Assignee:
Industrial Technology Research Institute, Hsin Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/120 ; H01L 2/148 ; H01L 2/184 ;
U.S. Cl.
CPC ...
H01L 2/120 ; H01L 2/148 ; H01L 2/184 ;
Abstract
A method for polysilicon crystallization by simultaneous laser and rapid thermal annealing is disclosed. In the method, a substrate that has an amorphous silicon layer on top is first provided and positioned on a conveyor situated inside a temperature-controlled chamber. The temperature-controlled chamber is equipped with a window in a top wall that is substantially transparent to thermal and laser energy. A beam of thermal energy and simultaneously a beam of laser energy merged with the thermal energy is then directed through the window onto a top surface of the substrate to convert an amorphous silicon film into a polysilicon film.