The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 06, 2004
Filed:
Feb. 25, 2002
Tatsuya Kunisato, Takatsuki, JP;
Nobuhiko Hayashi, Osaka, JP;
Hiroki Ohbo, Hirakata, JP;
Masayuki Hata, Kadoma, JP;
Tsutomu Yamaguchi, Nara, JP;
Sanyo Electric Co., Ltd., Osaka, JP;
Abstract
A nitride-based semiconductor element enabling formation of a nitride-based semiconductor layer having low dislocation density, consisting of a material different from that of an underlayer, on the underlayer with a small thickness is obtained. This nitride-based semiconductor element comprises a plurality of mask layers formed at a prescribed interval to be in contact with the upper surface of the underlayer while partially exposing the underlayer and the nitride-based semiconductor layer, formed on the upper surface of the underlayer and the mask layers, consisting of the material different from that of the underlayer. The minimum distance between adjacent mask layers is smaller than the width of an exposed part of the underlayer located between the adjacent mask layers.