The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 29, 2004
Filed:
Sep. 24, 2001
Jörn Lützen, Dresden, DE;
Infineon Technologies AG, Munich, DE;
Abstract
A trench capacitor has a bottle-shaped trench in a semiconductor substrate. The bottle-shaped trench has a wider lower region and a narrower upper region. An outer electrode layer is formed in the semiconductor substrate around a lower section of the wider lower region of the trench. A dielectric intermediate layer is provided on the lower section of the trench wall in the wider lower region of the trench. A first, thick insulation layer, which adjoins the dielectric intermediate layer, is provided on an upper section of the trench wall in the wider lower region of the trench. A second, thin insulation layer, which adjoins the first thick insulation layer, is formed on the trench wall in the narrower upper region of the trench. An inner electrode layer substantially fills the trench. A method of producing a trench capacitor is also provided.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile