Semiconductor device and method of driving transistors

Abstract

When a driving unit ( ) charges gate input capacitance ( ) of an IGBT ( ), the gate input capacitance ( ) accumulates electric charges which are accumulated therein when the driving unit ( ) discharges the gate input capacitance ( ). Therefore, it is possible to reduce the amount of electric charges to be supplied to the gate input capacitance ( ) by the driving unit ( ) until the charge of the gate input capacitance ( ) is completed. As a result, it is possible to reduce the required power capacity of a control power supply ( ). Further, since the electric charges accumulated in the gate input capacitance ( ) are effectively used, it is possible to ensure power savings of a semiconductor device. Thus provided are a semiconductor device and a method of driving a transistor, in which electric charges accumulated in gate input capacitance of an insulated gate transistor are effectively utilized, to reduce required power capacity of a power supply for driving the transistor and ensure power savings of the semiconductor device on the whole.