The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 29, 2004
Filed:
Nov. 02, 2001
Applicant:
Inventor:
Ping Yuan, Piscataway, NJ (US);
Assignee:
Multiplex, Inc., South Plainfied, NJ (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 3/1072 ; H01L 3/1109 ;
U.S. Cl.
CPC ...
H01L 3/1072 ; H01L 3/1109 ;
Abstract
In one aspect the invention relates to a high bandwidth shallow mesa semiconductor photodiode responsive to incident electromagnetic radiation. The photodiode includes an absorption narrow bandgap layer, a wide bandgap layer disposed substantially adjacent to the absorption layer, a first doped layer having a first conductivity type disposed substantially adjacent to the wide bandgap layer, and a passivation region disposed substantially adjacent to the wide bandgap layer and the first doped layer.