The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 29, 2004
Filed:
Jul. 30, 2002
Applicant:
Inventors:
Olivier Menut, Saint Martin d'Heres, FR;
Hervé Jaouen, Meylan, FR;
Guillaume Bouche, Grenoble, FR;
Assignee:
STMicroelectronics S.A., Montrouge, FR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/18228 ;
U.S. Cl.
CPC ...
H01L 2/18228 ;
Abstract
A method for manufacturing a contact between a semiconductor substrate and a doped polysilicon layer deposited on the substrate with an interposed insulating layer, wherein elements adapted to making the insulating layer permeable to the migration of dopants from the polysilicon layer to the substrate are implanted.