The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 29, 2004
Filed:
Dec. 10, 2001
Applicant:
Inventors:
Ciby Thuruthiyil, Fremont, CA (US);
Philip A. Fisher, Foster City, CA (US);
Assignee:
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/182 ;
U.S. Cl.
CPC ...
H01L 2/182 ;
Abstract
A complementary metal oxide semiconductor (CMOS) fabrication process. The process comprises creating a polysilicon layer having a first thickness for a transistor gate area and a second thickness for a fuse area. The first thickness is greater than the second thickness, wherein most of the polysilicon in the fuse area will react with a metal layer to form polysilicide during a rapid thermal anneal (RTA) process.